Investigation on Schottky-Barrier MOSFETs for Memory Application
für 44.10€ kaufen ··· 9783843377478 ··· 10361101442 ··· The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption. Hersteller: LAP Lambert Academic Publishing Marke: LAP Lambert Academic Publishing EAN: 9783843377478 Kat: Hardcover/Naturwissenschaften, Medizin, Informatik, Technik/Technik/Maschinenbau, Fertigungstechnik Lieferzeit: Sofort lieferbar Versandkosten: Ab 20¤ Versandkostenfrei in Deutschland Icon: https://www.inforius-bilder.de/bild/?I=QFzM4jBHIwNAheKjwyLljgopEvIXd7k5%2B2W0ObGONgE%3D Bild:
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