Vertical Gate Controlled Tunnel Transistors in Si and SiGe
··· lezzter Preis 26.60€ ··· 9783867272636 ··· 10361169680 ··· Decreasing the size of transistor structures (`scaling¿`) is an ongoing trend in microelectronics, since smaller structures allow more chips to be placed on a wafer. So far, the result has always been a cost saving, with increasing complexity and clock frequency as welcome side effects. But shrinking the conventional MOSFET, on which the conventional CMOS technology is built on, leads to an increasing number of problems with every new technology generation. Many electrical parameters of the conventional MOSFET deteriorate by shrinking its channel length. The resulting short channel effects require ever more complicated compensation structures. Yet certain parameters such as the sub-threshold swing or the width of space charge regions do not scale. Thus, with decreasing channel length it becomes increasingly difficult to design a conventional MOSFET that can be switched off. Approaching approximately 10 nm, electrons would tunnel through the channel region even if the device was to be turned off, leading to unacceptable leakage currents. Hersteller: Cuvillier Verlag Marke: Cuvillier Verlag EAN: 9783867272636 Kat: Hardcover/Naturwissenschaften, Medizin, Informatik, Technik/Technik/Bautechnik, Umwelttechnik Lieferzeit: Sofort lieferbar Versandkosten: Ab 20¤ Versandkostenfrei in Deutschland Icon: https://www.inforius-bilder.de/bild/?I=SI%2FyLUxfCJGLpCCnHV2R%2FQID6pgBnNwA2rdsuDOTXiU%3D Bild:
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