··· lezzter Preis 21.85 ··· 9783869551883 ··· 10361192609 ··· This work treats intermodulation distortion performance ofGaN-HEMT high-power transistors. A detailed study on the physicalparameters influencing third-order intermodulation distortions iscarried out, based on the large-signal model and on physical devicesimulation. Devices are characterized in terms of linearity by settingup a sophisticated measurement system. Among others, an electronicfuse is used at the drain side to avoid catastrophic failure duringmeasurement. The bias-dependent transconductance characteristic isidentified as the dominating source for intermodulation distortion inGaN HEMTs, while drain-source capacitance and access resistanceshave only minor influence. The corresponding physical parametersgoverning the transconductance behavior are determined andoptimized structures for high linearity are proposed. Besidescharacterization and analysis of conventional designs, a novel devicearchitecture for very high linearity is presented. Finally, performanceof GaN HEMTs within a hybrid amplifier configuration is shown andthe combination of high power, high linearity, and low-noisecharacteristics is highlighted. Hersteller: Cuvillier Verlag Marke: Cuvillier Verlag EAN: 9783869551883 Kat: Hardcover/Naturwissenschaften, Medizin, Informatik, Technik/Technik/Bautechnik, Umwelttechnik Lieferzeit: Sofort lieferbar Versandkosten: Ab 20¤ Versandkostenfrei in Deutschland Icon: https://www.inforius-bilder.de/bild/?I=oJrpe54zO1MChykchMSksKX6ymxyKuyUR%2F7uJ2gz2JI%3D Bild:
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