Device Characterization and Modeling of Large-Size GaN HEMTs
··· lezzter Preis 39.00€ ··· 9783862193646 ··· 1036162333 ··· This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. Analysis of such capacitances leads to original equations, employed to form capacitance ratios. Basic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device`s top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge`s non-quasi-static model and a dispersive-IDS model. The extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement`s boundary bias points. All IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy`s empirical character. Hersteller: Universität Kassel Marke: Universität Kassel EAN: 9783862193646 Kat: Hardcover/Naturwissenschaften, Medizin, Informatik, Technik/Technik Lieferzeit: Sofort lieferbar Versandkosten: Ab 20¤ Versandkostenfrei in Deutschland Icon: https://www.inforius-bilder.de/bild/?I=KLKPJhhRXvEoZP9NUh1crvQ%2BAMnlbPpT59mW9nAXAcg%3D Bild:
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